Zener Diodes

A ‌Zener Diode‌ is a specialized semiconductor device engineered to ‌maintain a stable reference voltage‌ in circuits by operating reliably in its ‌reverse breakdown region‌. Unlike standard diodes (which break down destructively under reverse bias), Zener diodes leverage controlled reverse breakdown for precise voltage regulation, surge protection, and signal clipping.

‌Core Working Principle‌:

1‌. Reverse Breakdown Mechanism‌:

Zener Effect‌: Dominates below ‌5.6V‌ – quantum tunneling of electrons across the PN junction.

Avalanche Effect‌: Dominates above ‌5.6V‌ – impact ionization creating electron "avalanches".
→ Both maintain near-constant voltage (VZ​) across the diode during reverse conduction.

2‌.Self-Recovery:

Unlike fuses or MOVs, Zener diodes revert to blocking mode when voltage drops below VZ​.

Part Number

Marking

Package

PD

W

Vz @ Izt 

Nom.
(V)

Min.
(V)

Max.
(V)

ZZT

Max.

(Ω)

 @ Izt

(mA)

ZZK

Max.

(Ω)

 @ Izk

(mA)

IR(μA)

Max.

 @VR
(V)

1N5249B
DO-35
0.5
19.0
18.05
19.95
23
6.6
600
0.25
0.1
14
1N5250B
DO-35
0.5
20.0
19.00
21.00
25
6.2
600
0.25
0.1
15
1N5251B
DO-35
0.5
22.0
20.90
23.10
29
5.6
600
0.25
0.1
17
1N5252B
DO-35
0.5
24.0
22.80
25.20
33
5.2
600
0.25
0.1
18
1N5253B
DO-35
0.5
25.0
23.75
26.25
35
5
600
0.25
0.1
19
1N5254B
DO-35
0.5
27.0
25.65
28.35
41
4.6
600
0.25
0.1
21
1N5255B
DO-35
0.5
28.0
26.60
29.40
44
4.5
600
0.25
0.1
21
1N5256B
DO-35
0.5
30.0
28.50
31.50
49
4.2
600
0.25
0.1
23
1N5257B
DO-35
0.5
33.0
31.35
34.65
58
3.8
700
0.25
0.1
25
1N5258B
DO-35
0.5
36.0
34.20
37.80
70
3.4
700
0.25
0.1
27
1N5259B
DO-35
0.5
39.0
37.05
40.95
80
3.2
800
0.25
0.1
30
1N5260B
DO-35
0.5
43.0
40.85
45.15
93
3
900
0.25
0.1
33
1N5261B
DO-35
0.5
47.0
44.65
49.35
150
2.7
1000
0.25
0.1
36
1N5262B
DO-35
0.5
51.0
48.45
53.55
125
2.5
1100
0.25
0.1
39
1N5263B
DO-35
0.5
56.0
53.20
58.80
150
2.2
1300
0.25
0.1
43
Total 1435 < 1...141516...96 > proceed page OK

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Address: No.196, East Qingyu Road‌, Rucheng Street, Rugao-226500, Jiangsu Province, China.

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