Fast Recovery Rectifier Diodes
A Fast Recovery Rectifier Diode is a specially designed high-frequency rectification device. By optimizing its PN junction structure (e.g., adding a base-region I-layer to form a PIN junction), it achieves an ultra-short reverse recovery time (hundreds to tens of nanoseconds). It is specifically engineered for high-efficiency energy conversion in high-frequency switching circuits (operating frequencies up to kHz~MHz). Its core value lies in significantly reducing switching losses and enhancing power supply efficiency.
Key Performance Advantages:
|
Characteristic |
Fast Recovery Rectifier Diodes |
General Purpose Rectifier Diodes |
|
Reverse Recovery Time |
50 ns – 500 ns |
>1 μs |
|
Operating Frequency |
Tens of kHz – Several MHz |
≤1 kHz |
|
Reverse Recovery Charge |
Very low (reduces switching noise) |
Relatively high |
|
Forward Voltage Drop |
0.6–0.8V (similar to standard diodes) |
0.7V |
Part Number
Package
VRM (V)
Io_Max(A)
VF_Max(V)
Rated lo(A)
IFSM_Max(A)
Trr_Max(ns)
IR@25℃IR(μA)
Tj(℃)