General Purpose Rectifier Diodes
A General Purpose Rectifier Diode is a semiconductor device based on the unidirectional conductivity of a PN junction, primarily used to convert alternating current (AC) to direct current (DC). It is suitable for low-frequency rectification circuits (typically ≤1 kHz). Its core structure consists of P-type and N-type semiconductors (usually silicon), enabling current flow in one direction for power conversion.
Comparison with Other Rectification Devices:
|
Characteristic |
General Purpose Diodes |
Fast Recovery Diodes |
Schottky Diodes |
|
Operating Frequency |
≤1 kHz |
Tens of kHz |
>100 kHz |
|
Reverse Recovery Time |
μs range |
<5 μs |
10–40 ns |
|
Forward Voltage Drop |
0.7V |
0.8–1.5V |
0.15–0.45V |
|
Voltage Tolerance |
High (up to kV) |
Medium-High (100s V–kV) |
Low (typically <200V) |
|
Typical Use Cases |
Low-freq, high-voltage/high-current |
Mid-freq SMPS |
High-freq, low-voltage rectification |
Part Number
Package
VRM (V)
Io_Max(A)
VF_Max(V)
Rated lo(A)
IFSM_Max(A)
IR@25℃IR(μA)
Tj(℃)