Schottky Diodes

A ‌Schottky Diode‌ (also known as a ‌hot-carrier diode‌ or ‌schottky barrier diode‌) is a specialized semiconductor device formed by a ‌metal-semiconductor junction‌ (MS junction), rather than the conventional P-N junction found in standard diodes. This unique structure enables ‌ultra-fast switching speeds‌ (nanosecond-scale) and an ‌extremely low forward voltage drop‌ (typically ‌0.1–0.4V‌), making it ideal for high-frequency and power-sensitive applications‌.

Working Principle‌:

1‌. Forward Bias Operation‌:

Applied voltage reduces the schottky barrier height → electrons flow from semiconductor to metal.

Low forward drop (0.15–0.45V)‌ minimizes power loss‌.

2‌. Reverse Bias Operation‌:

Increases barrier height → blocks current flow.

Limited reverse voltage tolerance‌ (usually <200V) due to thin depletion region‌.

3‌. Ultra-Fast Switching‌:

No reverse recovery charge (Qrr​≈0) → switches off in ‌<10 ns‌ (vs. microseconds in PN diodes).

Part Number

Package

VRM_Max(V)

Io_Max(A)

VF_Max(V)

Rated lo(A)

IFSM_Max(A)

IR@25℃IR(μA)

Tj (℃)

DO-27
20
5
0.55
5
120
0.2
-55~+150
DO-27
40
5
0.55
5
120
0.2
-55~+150
DO-27
40
5
0.48
5
80
0.2
-55~+125
DO-27
60
5
0.7
5
120
0.2
-55~+150
DO-27
60
5
0.49
5
80
0.2
-55~+150
DO-27
80
5
0.6
5
80
0.2
-55~+150
DO-27
100
5
0.6
5
120
0.1
-55~+150
DO-27
100
8
0.85
8
150
0.1
-55~+175
DO-27
100
8
0.7
8
120
0.2
-55~+150
DO-27
150
8
0.85
8
150
0.1
-55~+175
DO-27
200
8
0.85
8
150
0.1
-55~+175
DO-27
20
8
0.55
8
150
0.2
-55~+150
DO-27
40
8
0.55
8
150
0.2
-55~+150
DO-27
40
8
0.48
8
120
0.2
-55~+125
DO-27
60
8
0.7
8
150
0.2
-55~+150
Total 237 < 1...345...16 > proceed page OK

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