Schottky Diodes
A Schottky Diode (also known as a hot-carrier diode or schottky barrier diode) is a specialized semiconductor device formed by a metal-semiconductor junction (MS junction), rather than the conventional P-N junction found in standard diodes. This unique structure enables ultra-fast switching speeds (nanosecond-scale) and an extremely low forward voltage drop (typically 0.1–0.4V), making it ideal for high-frequency and power-sensitive applications.
Working Principle:
1. Forward Bias Operation:
Applied voltage reduces the schottky barrier height → electrons flow from semiconductor to metal.
Low forward drop (0.15–0.45V) minimizes power loss.
2. Reverse Bias Operation:
Increases barrier height → blocks current flow.
Limited reverse voltage tolerance (usually <200V) due to thin depletion region.
3. Ultra-Fast Switching:
No reverse recovery charge (Qrr≈0) → switches off in <10 ns (vs. microseconds in PN diodes).
Part Number
Package
VRM_Max(V)
Io_Max(A)
VF_Max(V)
Rated lo(A)
IFSM_Max(A)
IR@25℃IR(μA)
Tj (℃)