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ProductsOur products cover axial diodes, surface mount bridge rectifiers, photovoltaic modules, etc., and are widely used in fields such as power electronics, aerospace, and industrial automation.
Photovoltaic Bypass Diodes
Description:
The Photovoltaic Bypass Diode (BPD) is a diode connected in reverse-parallel across groups of solar cells within a PV module. As a critical component of solar photovoltaic systems, its primary function is to prevent damage caused by the hot spot effect.Specifically, BPDs protect PV modules by providing an alternative current path when partial shading occurs. Under strong sunlight, shaded cells cannot generate power and instead act as electrical loads, causing them to overheat severely. The bypass diode mitigates this risk by allowingcurrent to flow around the shaded cell string, thereby safeguarding module integrity and preventing hotspot-induced failure.
Driven by the continuous advancement of PV module technology, particularly the integration of double-glass bifacial technology, module power has increased from 250W to over 600W. Concurrently, silicon wafer sizes have evolved from 125mm, 156.75mm, 158.75mm, and 166mm to the current 182mm and 210mm standards. This evolution has significantly reduced system costs while simultaneously elevating the operating current of bypass diodes from the initial 7A to over 18A. Correspondingly, the rated current for junction box designs has risen to 25A–30A, even exceeding 35A.
Basic Product Information:
1.Provides Bypass Protection: Prevents hot spot effects in PV cells when shaded or obstructed.
2.Adapts to Various Module Structures: Features multiple packaging outlines compatible with internal designs of PV junction boxes.
3.Forward Rated Current: 15A to 70A.
4.Certifications: Compliant with IEC 61215 standards and TUV certification requirements.
5.Environmentally Compliant: Designed using eco-friendly materials; meets RoHS standards.
Photovoltaic Bypass Diode Catalog:
| Part Number | Package | VRM_Max (V) | Io_Max(A) | IFSM_Max(A) | Rated lo(A) | VF_Max(V) | IR@25℃IR(uA) | IR@125℃IR(uA) | RθJC(℃/W) | Tj（℃） |
| 15SQ045 | R-6 | 45 | 15 | 325 | 15 | 0.5 | 0.5 | 50 | 2.5 | 55～+200 |
| 20SQ045 | R-6 | 45 | 20 | 375 | 20 | 0.51 | 0.5 | 50 | 2.5 | 55～+200 |
| 25SQ045 | R-6 | 45 | 25 | 380 | 25 | 0.52 | 0.5 | 50 | 2.5 | 55～+200 |
| 30SQ045 | R-6 | 45 | 30 | 380 | 30 | 0.55 | 0.5 | 50 | 2.5 | 55～+200 |
| GF2045MG | TO-263 | 45 | 20 | 325 | 20 | 0.55 | 0.5 | 50 | 2 | 55～+200 |
| GF3045MG | TO-263 | 45 | 30 | 375 | 30 | 0.55 | 0.5 | 50 | 2 | 55～+200 |
| GF3045MG | TO-263 | 45 | 30 | 315 | 30 | 0.5 | 0.1 | 7 | 2 | 55～+200 |
| GFMK3045 | 09E(JUM01) | 45 | 30 | 350 | 30 | 0.51 | 0.08 | 7 | 1.5 | 55～+200 |
| GFMK4045 | 09E(JUM01) | 45 | 40 | 400 | 40 | 0.52 | 0.1 | 12 | 1.5 | 55～+200 |
| GFMK4045C | 09E(JUM01) | 45 | 40 | 650 | 40 | 0.51 | 0.12 | 13 | 1.5 | 55～+200 |
| GFMK6045C | 09E(JUM01) | 45 | 60 | 700 | 60 | 0.51 | 0.12 | 18 | 1.5 | 55～+200 |
| MK3045 | JA005(JUM05) | 45 | 30 | 325 | 30 | 0.55 | 0.1 | 7 | 1 | 55～+200 |
| MK4045 | JA005(JUM05) | 45 | 40 | 350 | 40 | 0.55 | 0.1 | 9 | 1 | 55～+200 |
| MK5045 | JA005(JUM05) | 45 | 50 | 700 | 50 | 0.55 | 0.2 | 18 | 1 | 55～+200 |
Product Reliability Test:
Our comprehensive suite of 16 reliability test items provides demonstrable data support for the product's MTBF (Mean Time Between Failures). This rigorous testing regimen ensures the long-term performance of photovoltaic bypass diodes, safeguarding their functionality throughout the industry-standard 25-year warranty period.
| No. | Experiment Item | Experiment Conditions | Time or Cycle | Reference |
| 1 | High Temperature Reverse Bias | TA=100±5℃，Bias=80%VR | 48H/168H/1000H | MIL-STD-750F METHOD-1038 |
| 2 | High Temperature Storage | TA=150±5℃ | 48H/168H/1000H | MIL-STD-750F METHOD-1031 |
| 3 | Intermittent Operation Life | ON=5Min with rated △TjF≥100℃ OFF=5Min with cool forced air | 1000/10000 CYCLE | MIL-STD-750F METHOD-1036 |
| 4 | Temperature Cycling (air to air) | TH=150+15/-0℃15Min TL=-55+0/-10℃15Min | 1000 CYCLE | MIL-STD-750F METHOD-1051 |
| 5 | Resistance to Soldering Heat | 260±5℃ | 10±1 SEC | MIL-STD-750F METHOD-2031 |
| 6 | Terminal Strength* | 1Kg in axial lead direction | 10 SEC | MIL-STD-750F METHOD-2036 |
| 7 | Lead Fatigue* | 0.5Kg weight applied to lead bending are 90±5° | 3 TIMES | |
| 8 | Forward Surge Current | 8.3ms,Single half sine-wave superimposed on rated load | 1 PULSE | MIL-STD-750F METHOD-4066 |
| 9 | Unbiased Autoclave Test | TA=121±2℃,29.7PSIG, RH=100% | 96H/168H | JESD22-A102 |
| 10 | Solderability | 245±5℃ | 5 SEC | MIL-STD-750F METHOD-2026 |
| 11 | Low Temperature Storage | -55±5℃ | 48H/168H/1000H | JESD22-A119 |
| 12 | High-Temperature High-Humidity Storage Test | 85±2℃，85±5%RH | 168H/1000H | MIL-STD-202G METHOD-103B |
| 13 | Thermal Shock | TH=150+15/-0℃30Min TL=-55+0/-10℃30Min Transfer time≤3Min | 30 CYCLE | MIL-STD-750F METHOD-1051 |
| 14 | ESD | HBM ,±30KV | 1 CYCLE | AEC-Q101-001/002 |
| 15 | Bypass Diode Thermal Test | Rated J-Box Current 1.25times J-Box Current | 1 CYCLE | IEC 62790 |
| 16 | Thermal Runaway Test | 80% Rated Current 16V Reverse Bias | 1 CYCLE | IEC 62979 |
* For Axial Products Only.
Nantong JUXIN Semiconductor Co., Ltd.
Contact: Mr.Jacky
Address: No.196, East Qingyu Road, Rucheng Street, Rugao-226500, Jiangsu Province, China.
Phone(Wechat): +86-15190885420
Email: info@rectifier-diode.com
Anhui JUXIN Semiconductor Co., Ltd.
Address: No.99,Shuanglong Road,Chizhou Economic Technology Development Zone,Anhui Province,China.
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