High Voltage Diodes

A ‌High Voltage Diode‌ is a specialized semiconductor device engineered to ‌rectify or block electric currents in high-voltage circuits‌ (typically with a reverse withstand voltage ≥ ‌1,000V‌). Its structure, materials, and performance are optimized for stability and safety under high-voltage conditions.

‌Core Features & Design:‌

1‌. High Reverse Breakdown Voltage: 

Rated voltage: ‌1 kV to 300 kV‌ (or higher), significantly exceeding standard diodes (tens to hundreds of volts).

Utilizes ‌precision doping‌ and ‌thickened PN junctions‌ to prevent avalanche breakdown.

‌2. Structural Innovations:‌

Mesa Structure:‌ Beveled edges to eliminate electric field concentration.

Long Base Region:‌ Extends the depletion layer to distribute electric field stress.

Series-Connected Chips:‌ Ultra-high-voltage variants (e.g., silicon stacks) integrate multiple diode chips in series.

3‌. Material Technology:‌

Silicon (Si):‌ Dominant material due to high breakdown strength (≈300 kV/cm) and reliability.

Silicon Carbide (SiC):‌ Used for ultra-high-voltage/high-frequency applications (>10 kV), offering high-temperature tolerance and low losses.

Comparison with Standard Diodes:

‌Characteristic

High Voltage Diodes

Standard Diodes

‌Reverse Voltage

≥1 kV

Tens to hundreds of volts

‌Forward Voltage Drop

Higher (due to long-base design)

Lower (≈0.7 V)

‌Switching Speed

Slower (trr in μs range)

Can achieve ns (e.g., Schottky)

‌Size/Cost

Larger/Higher

Smaller/Lower

 

Part Number

Package

VRM_Max(kV)

Io_Max(mA)

VF_Max(V)

Rated lo(mA)

IFSM_Max(A)

Trr_Max(ns)

IR@25℃IR(μA)

Tj(℃)

Φ2.0*5.0
3
10
12
5
0.5
100
2
-55~+125
Φ2.5*6.5
3
10
12
5
0.5
100
2
-55~+125
Φ2.0*5.0
4
10
15
5
0.5
100
2
-55~+125
Φ2.5*6.5
4
10
15
5
0.5
100
2
-55~+125
Φ2.0*5.0
6
10
20
5
0.5
100
2
-55~+125
Φ2.5*6.5
6
10
20
5
0.5
100
2
-55~+125
Φ3.0*8.0
6
10
20
5
0.5
100
2
-55~+125
SMA
6
10
13
5
0.5
100
2
-55~+125
Φ2.0*5.0
8
10
25
5
0.5
100
2
-55~+125
Φ2.5*6.5
8
10
25
5
0.5
100
2
-55~+125
Φ3.0*8.0
8
10
25
5
0.5
100
2
-55~+125
SMA
8
10
18
5
0.5
100
2
-55~+125
Φ2.5*6.5
10
10
30
5
0.5
100
2
-55~+125
Φ3.0*10
10
10
30
5
0.5
100
2
-55~+125
Φ2.5*10
12
10
37.5
5
0.5
100
2
-55~+125
Total 68 < 12345 > proceed page OK

Nantong JUXIN Semiconductor Co., Ltd.

Contact: Mr.Jacky

Address: No.196, East Qingyu Road‌, Rucheng Street, Rugao-226500, Jiangsu Province, China.

Phone(Wechat): +86-15190885420

Email: info@rectifier-diode.com

 

Anhui JUXIN Semiconductor Co., Ltd.

Address: No.99,Shuanglong Road,Chizhou Economic Technology Development Zone,Anhui Province,China.


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