High Voltage Diodes
A High Voltage Diode is a specialized semiconductor device engineered to rectify or block electric currents in high-voltage circuits (typically with a reverse withstand voltage ≥ 1,000V). Its structure, materials, and performance are optimized for stability and safety under high-voltage conditions.
Core Features & Design:
1. High Reverse Breakdown Voltage:
Rated voltage: 1 kV to 300 kV (or higher), significantly exceeding standard diodes (tens to hundreds of volts).
Utilizes precision doping and thickened PN junctions to prevent avalanche breakdown.
2. Structural Innovations:
Mesa Structure: Beveled edges to eliminate electric field concentration.
Long Base Region: Extends the depletion layer to distribute electric field stress.
Series-Connected Chips: Ultra-high-voltage variants (e.g., silicon stacks) integrate multiple diode chips in series.
3. Material Technology:
Silicon (Si): Dominant material due to high breakdown strength (≈300 kV/cm) and reliability.
Silicon Carbide (SiC): Used for ultra-high-voltage/high-frequency applications (>10 kV), offering high-temperature tolerance and low losses.
Comparison with Standard Diodes:
|
Characteristic |
High Voltage Diodes |
Standard Diodes |
|
Reverse Voltage |
≥1 kV |
Tens to hundreds of volts |
|
Forward Voltage Drop |
Higher (due to long-base design) |
Lower (≈0.7 V) |
|
Switching Speed |
Slower (trr in μs range) |
Can achieve ns (e.g., Schottky) |
|
Size/Cost |
Larger/Higher |
Smaller/Lower |
Part Number
Package
VRM_Max(kV)
Io_Max(mA)
VF_Max(V)
Rated lo(mA)
IFSM_Max(A)
Trr_Max(ns)
IR@25℃IR(μA)
Tj(℃)